PTFB211503

PTFB211503FL-V2-R0 vs PTFB211503EL-V1-R0 vs PTFB211503EL-V1-R250

 
PartNumberPTFB211503FL-V2-R0PTFB211503EL-V1-R0PTFB211503EL-V1-R250
DescriptionRF MOSFET Transistors RF LDMOS FETIC AMP RF LDMOS H-33288-6IC AMP RF LDMOS
ManufacturerCree, Inc.--
Product CategoryRF MOSFET Transistors--
RoHSY--
Transistor PolarityN-Channel--
TechnologySi--
Vds Drain Source Breakdown Voltage65 V--
Rds On Drain Source Resistance80 mOhms--
Gain18 dB--
Output Power150 W--
Maximum Operating Temperature+ 225 C--
Mounting StyleSMD/SMT--
Package / CaseH-34288-4/2--
PackagingReel--
Operating Frequency2110 MHz to 2170 MHz--
TypeRF Power MOSFET--
BrandWolfspeed / Cree--
Number of Channels1 Channel--
Product TypeRF MOSFET Transistors--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Vgs Gate Source Voltage10 V--
제조사 부분 # 설명 RFQ
N/A
N/A
PTFB211503FL-V2-R0 RF MOSFET Transistors RF LDMOS FET
PTFB211503FL-V2-R250 RF MOSFET Transistors RF LDMOS FET
PTFB211503EL-V1-R0 IC AMP RF LDMOS H-33288-6
PTFB211503EL-V1-R250 IC AMP RF LDMOS
PTFB211503FL-V2-R0 IC AMP RF LDMOS H-34288-4
PTFB211503FL-V2-R250 IC AMP RF LDMOS
PTFB211503FLV2R0XTMA1 RF MOSFET Transistors
PTFB211503ELV1R0XTMA1 RF MOSFET Transistors
PTFB211503EL 신규 및 오리지널
PTFB211503FL 신규 및 오리지널
PTFB211503FLV2R250XTMA1 RF MOSFET Transistors RFP-LDMOS 9
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