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| PartNumber | R5009FNX | R5009FNJTL |
| Description | MOSFET Trans MOSFET N-CH 500V 9A | MOSFET Nch 500V 9A Power MOSFET |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | SMD/SMT |
| Package / Case | TO-220FP-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V |
| Id Continuous Drain Current | 9 A | 9 A |
| Rds On Drain Source Resistance | 840 mOhms | 650 mOhms |
| Configuration | Single | Single |
| Packaging | Bulk | Reel |
| Series | R5009FNX | R5009FNJ |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | ROHM Semiconductor | ROHM Semiconductor |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 500 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | R5009FNX | R5009FNJ |
| Unit Weight | 0.211644 oz | 0.077603 oz |
| Vgs th Gate Source Threshold Voltage | - | 2 V |
| Vgs Gate Source Voltage | - | 30 V |
| Qg Gate Charge | - | 18 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 119 W |
| Channel Mode | - | Enhancement |
| Fall Time | - | 40 ns |
| Rise Time | - | 20 ns |
| Typical Turn Off Delay Time | - | 50 ns |
| Typical Turn On Delay Time | - | 24 ns |