RN110

RN1106,LF(CT vs RN1105MFV,L3F vs RN1105MFV(TPL3)

 
PartNumberRN1106,LF(CTRN1105MFV,L3FRN1105MFV(TPL3)
DescriptionBipolar Transistors - Pre-Biased Bias Resistor Built-in transistorBipolar Transistors - Pre-Biased VESM PLN TRANSISTOR Pd 150mW F 1MHzBipolar Transistors - Pre-Biased 100mA 50volts 3Pin 2.2K x 47Kohms
ManufacturerToshibaToshibaToshiba
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased
RoHSYYN
Transistor PolarityNPNNPNNPN
Typical Input Resistor4.7 kOhms2.2 kOhms2.2 kOhms
Typical Resistor Ratio0.10.04680.047
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-416-3SOT-723-3-
DC Collector/Base Gain hfe Min808080
Collector Emitter Voltage VCEO Max50 V50 V50 V
Continuous Collector Current100 mA100 mA100 mA
Pd Power Dissipation100 mW150 mW150 mW
SeriesRN1106MFVRN1105RN1105
PackagingReelReelReel
Emitter Base Voltage VEBO5 V5 V-
BrandToshibaToshibaToshiba
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity300080008000
SubcategoryTransistorsTransistorsTransistors
Unit Weight0.000212 oz--
Configuration-SingleSingle
Peak DC Collector Current-100 mA100 mA
Collector Base Voltage VCBO-50 V-
Height-0.5 mm-
Length-1.2 mm-
Type-NPN Epitaxial Silicon Transistor-
Width-0.8 mm-
Maximum DC Collector Current-100 mA-
Maximum Operating Temperature--+ 150 C
DC Current Gain hFE Max--80
제조사 부분 # 설명 RFQ
Toshiba
Toshiba
RN1106,LF(CT Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
RN1105MFV,L3F Bipolar Transistors - Pre-Biased VESM PLN TRANSISTOR Pd 150mW F 1MHz
RN1105MFV(TPL3) Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 2.2K x 47Kohms
RN1105MFV(TPL3) Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 2.2K x 47Kohms
RN1105MFV,L3F Bipolar Transistors - Pre-Biased VESM PLN TRANSISTOR Pd 150mW F 1MHz
RN1106,LF(CT Bipolar Transistors - Pre-Biased Bias Resistor Built-in transisto
RN1105MFV(TL3,T) Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
RN1105FS(TPL3) Bipolar Transistors - Pre-Biased 50mA 20volts 3Pin 2.2K x 47Kohms
RN1106FS(TPL3) Bipolar Transistors - Pre-Biased 50mA 20volts 3Pin 4.7K x 47Kohms
RN1105CT 신규 및 오리지널
RN1106ACT 신규 및 오리지널
RN1106CT 신규 및 오리지널
RN1105ACT(TPL3)DKR-ND 신규 및 오리지널
RN1105ACT(TPL3)TR-ND 신규 및 오리지널
RN1105CT(TPL3)CT-ND 신규 및 오리지널
RN1105CT(TPL3)DKR-ND 신규 및 오리지널
RN1105CT(TPL3)TR-ND 신규 및 오리지널
RN1105LF(CTCT-ND 신규 및 오리지널
RN1105LF(CTDKR-ND 신규 및 오리지널
RN1105LF(CTTR-ND 신규 및 오리지널
RN1105MFV,L3FCT-ND 신규 및 오리지널
RN1105MFV,L3FDKR-ND 신규 및 오리지널
RN1105MFV,L3FTR-ND 신규 및 오리지널
RN1106ACT(TPL3)CT-ND 신규 및 오리지널
RN1106ACT(TPL3)DKR-ND 신규 및 오리지널
RN1106ACT(TPL3)TR-ND 신규 및 오리지널
RN1106CT(TPL3)CT-ND 신규 및 오리지널
RN1106CT(TPL3)DKR-ND 신규 및 오리지널
RN1106CT(TPL3)TR-ND 신규 및 오리지널
RN1106LF(CTCT-ND 신규 및 오리지널
RN1106LF(CTDKR-ND 신규 및 오리지널
RN1106LF(CTTR-ND 신규 및 오리지널
RN1105LF(CT Bipolar Transistors - Pre-Biased SSM PLN (LF) TRAN 0.1W /1MHZ
RN1106LF(CT Bipolar Transistors - Pre-Biased SSM PLN (LF) TRAN 100MW /250M
RN1106(TE85L,F) Trans Digital BJT NPN 50V 100mA 3-Pin SSM T/R
RN1105F 신규 및 오리지널
RN1105FS L4 신규 및 오리지널
RN1105FT 신규 및 오리지널
RN1105FV 신규 및 오리지널
RN1105MFV,L3F(T 신규 및 오리지널
RN1105MFV,L3SOYF(T 신규 및 오리지널
RN1105MFVL3F Trans GP BJT NPN 50V 0.1A 3-Pin VESM Embossed T/R - Tape and Reel (Alt: RN1105MFV,L3F)
RN1105MFVL3F(T 신규 및 오리지널
RN1106 신규 및 오리지널
RN1106 XF 신규 및 오리지널
RN1106(T5LFT) 신규 및 오리지널
RN1106(XF) 신규 및 오리지널
RN1106FS(TPL3 ) 신규 및 오리지널
RN1106MFV 신규 및 오리지널
RN1105MFV 신규 및 오리지널
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