RN1115MFV

RN1115MFV,L3F vs RN1115MFV(TL3,T) vs RN1115MFV(TPL3)

 
PartNumberRN1115MFV,L3FRN1115MFV(TL3,T)RN1115MFV(TPL3)
DescriptionBipolar Transistors - Pre-Biased BIAS RESISTOR BUILT IN TRANSISTORBipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 2.2kohmBipolar Transistors - Pre-Biased 2.2Kohms x 10Kohms
ManufacturerToshibaToshibaToshiba
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased
RoHSYYY
SeriesRN1115MFVRN1115MFVRN1115MFV
PackagingReelReelReel
BrandToshibaToshibaToshiba
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity800080008000
SubcategoryTransistorsTransistorsTransistors
Transistor Polarity--NPN
Typical Input Resistor--2.2 kOhms
Typical Resistor Ratio--0.22
Mounting Style--SMD/SMT
DC Collector/Base Gain hfe Min--50
Collector Emitter Voltage VCEO Max--50 V
Continuous Collector Current--100 mA
Pd Power Dissipation--150 mW
Minimum Operating Temperature--- 65 C
Maximum Operating Temperature--+ 150 C
Collector Base Voltage VCBO--50 V
Emitter Base Voltage VEBO--6 V
Height--1.2 mm
Length--1.2 mm
Operating Temperature Range--- 65 C to + 150 C
Type--NPN Epitaxial Silicon Transistor
Width--0.5 mm
제조사 부분 # 설명 RFQ
Toshiba
Toshiba
RN1115MFV,L3F Bipolar Transistors - Pre-Biased BIAS RESISTOR BUILT IN TRANSISTOR
RN1115MFV(TL3,T) Bipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 2.2kohm
RN1115MFV(TPL3) Bipolar Transistors - Pre-Biased 2.2Kohms x 10Kohms
RN1115MFV(TPL3) Bipolar Transistors - Pre-Biased 2.2Kohms x 10Kohms
RN1115MFVL3FCT-ND 신규 및 오리지널
RN1115MFVL3FDKR-ND 신규 및 오리지널
RN1115MFVL3FTR-ND 신규 및 오리지널
RN1115MFV 신규 및 오리지널
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