![]() | |||
| PartNumber | RN1115MFV,L3F | RN1115MFV(TL3,T) | RN1115MFV(TPL3) |
| Description | Bipolar Transistors - Pre-Biased BIAS RESISTOR BUILT IN TRANSISTOR | Bipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 2.2kohm | Bipolar Transistors - Pre-Biased 2.2Kohms x 10Kohms |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
| RoHS | Y | Y | Y |
| Series | RN1115MFV | RN1115MFV | RN1115MFV |
| Packaging | Reel | Reel | Reel |
| Brand | Toshiba | Toshiba | Toshiba |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
| Factory Pack Quantity | 8000 | 8000 | 8000 |
| Subcategory | Transistors | Transistors | Transistors |
| Transistor Polarity | - | - | NPN |
| Typical Input Resistor | - | - | 2.2 kOhms |
| Typical Resistor Ratio | - | - | 0.22 |
| Mounting Style | - | - | SMD/SMT |
| DC Collector/Base Gain hfe Min | - | - | 50 |
| Collector Emitter Voltage VCEO Max | - | - | 50 V |
| Continuous Collector Current | - | - | 100 mA |
| Pd Power Dissipation | - | - | 150 mW |
| Minimum Operating Temperature | - | - | - 65 C |
| Maximum Operating Temperature | - | - | + 150 C |
| Collector Base Voltage VCBO | - | - | 50 V |
| Emitter Base Voltage VEBO | - | - | 6 V |
| Height | - | - | 1.2 mm |
| Length | - | - | 1.2 mm |
| Operating Temperature Range | - | - | - 65 C to + 150 C |
| Type | - | - | NPN Epitaxial Silicon Transistor |
| Width | - | - | 0.5 mm |