 |  | | |
| PartNumber | RN1131MFV(TL3,T) | RN1131MFV | RN1131MFV(TL3T) |
| Description | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO | ||
| Manufacturer | Toshiba | TOSHIBA | - |
| Product Category | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Single, Pre-Biased | - |
| RoHS | Y | - | - |
| Configuration | Single | - | - |
| Transistor Polarity | NPN | - | - |
| Typical Input Resistor | 100 kOhms | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-723 | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 150 mW | - | - |
| Series | RN1131MFV | - | - |
| Packaging | Reel | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Brand | Toshiba | - | - |
| Maximum DC Collector Current | 100 mA | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 8000 | - | - |
| Subcategory | Transistors | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Toshiba |
RN1131MFV(TL3,T) | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO | |
| RN1131MFV(TPL3) | Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 100Kohms x 0ohms | ||
| RN1131MFV(TL3,T) | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO | ||
| RN1131MFV(TPL3) | Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 100Kohms x 0ohms | ||
| RN1131MFV(TL3T)CT-ND | 신규 및 오리지널 | ||
| RN1131MFV(TL3T)DKR-ND | 신규 및 오리지널 | ||
| RN1131MFV(TL3T)TR-ND | 신규 및 오리지널 | ||
| RN1131MFV | 신규 및 오리지널 | ||
| RN1131MFV(TL3T) | 신규 및 오리지널 |