RN196

RN1964TE85LF vs RN1965(TE85L,F) vs RN1965FE(TE85L,F)

 
PartNumberRN1964TE85LFRN1965(TE85L,F)RN1965FE(TE85L,F)
DescriptionBipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50VBipolar Transistors - Pre-Biased US6 PLN (LF) TRANSISTOR Pd 50mW F 1MHzBipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
ManufacturerToshibaToshibaToshiba
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased
RoHSY-Y
ConfigurationDualDualDual
Transistor PolarityNPNNPNNPN
Typical Input Resistor47 kOhms2.2 kOhms2.2 kOhms
Typical Resistor Ratio10.04680.0468
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-363-6US-6SOT-563
DC Collector/Base Gain hfe Min808080
Collector Emitter Voltage VCEO Max50 V50 V50 V
Continuous Collector Current100 mA100 mA100 mA
Pd Power Dissipation200 mW200 mW100 mW
SeriesRN1964-RN1965
PackagingReelReelReel
Emitter Base Voltage VEBO10 V5 V5 V
BrandToshibaToshibaToshiba
Maximum DC Collector Current100 mA100 mA100 mA
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity300030004000
SubcategoryTransistorsTransistorsTransistors
Unit Weight0.000212 oz-0.000106 oz
Maximum Operating Frequency-250 MHz-
Peak DC Collector Current-100 mA-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Channel Mode-Enhancement-
제조사 부분 # 설명 RFQ
Toshiba
Toshiba
RN1964TE85LF Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
RN1965(TE85L,F) Bipolar Transistors - Pre-Biased US6 PLN (LF) TRANSISTOR Pd 50mW F 1MHz
RN1968(TE85L,F) Bipolar Transistors - Pre-Biased US6 TRANSISTOR Pd 50mW F 1Mhz (LF)
RN1965FE(TE85L,F) Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
RN1966FE(TE85L,F) Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
RN1964FS(TPL3) Bipolar Transistors - Pre-Biased Polarity=NPNx2 4.7K x 4.7Kohms
RN1967FS(TPL3) Bipolar Transistors - Pre-Biased 10K x 47Kohms Polarity=NPNx2
RN1966FS(TPL3) Bipolar Transistors - Pre-Biased 4.7K x 47Kohms Polarity=NPNx2
RN1965FS(TPL3) Bipolar Transistors - Pre-Biased 2.2K x 47Kohms Polarity=NPNx2
RN1969FS(TPL3) Bipolar Transistors - Pre-Biased 47K x 22Kohms Polarity=NPNx2
RN1968FS(TPL3) Bipolar Transistors - Pre-Biased 22K x 47Kohms Polarity=NPNx2
RN1965FE(TE85L,F) Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
RN1966FE(TE85L,F) Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
RN1964TE85LF Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
RN1965FE 신규 및 오리지널
RN1967FE 신규 및 오리지널
RN1968 신규 및 오리지널
RN1968FE 신규 및 오리지널
RN1969FE 신규 및 오리지널
RN1964TE85LFCT-ND 신규 및 오리지널
RN1964TE85LFDKR-ND 신규 및 오리지널
RN1964TE85LFTR-ND 신규 및 오리지널
RN1965(TE85LF)CT-ND 신규 및 오리지널
RN1965(TE85LF)DKR-ND 신규 및 오리지널
RN1965(TE85LF)TR-ND 신규 및 오리지널
RN1965FE(TE85LF)CT-ND 신규 및 오리지널
RN1965FE(TE85LF)DKR-ND 신규 및 오리지널
RN1965FE(TE85LF)TR-ND 신규 및 오리지널
RN1966FE(TE85LF)CT-ND 신규 및 오리지널
RN1966FE(TE85LF)DKR-ND 신규 및 오리지널
RN1966FE(TE85LF)TR-ND 신규 및 오리지널
RN1967FE(TE85LF)CT-ND 신규 및 오리지널
RN1967FE(TE85LF)DKR-ND 신규 및 오리지널
RN1967FE(TE85LF)TR-ND 신규 및 오리지널
RN1968(TE85LF)CT-ND 신규 및 오리지널
RN1968(TE85LF)DKR-ND 신규 및 오리지널
RN1968(TE85LF)TR-ND 신규 및 오리지널
RN1968FE(TE85LF)CT-ND 신규 및 오리지널
RN1968FE(TE85LF)DKR-ND 신규 및 오리지널
RN1968FE(TE85LF)TR-ND 신규 및 오리지널
RN1969FE(TE85LF)CT-ND 신규 및 오리지널
RN1969FE(TE85LF)DKR-ND 신규 및 오리지널
RN1969FE(TE85LF)TR-ND 신규 및 오리지널
RN1965 신규 및 오리지널
RN1966 신규 및 오리지널
RN1966CT 신규 및 오리지널
RN1966FE 신규 및 오리지널
RN1967 신규 및 오리지널
RN1967FS 신규 및 오리지널
RN1968FS 신규 및 오리지널
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