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| PartNumber | RN2109MFV,L3F | RN2109MFVL3F-ND |
| Description | Bipolar Transistors - Pre-Biased Bias Resistor PNP -.1A -50V 47kohm | |
| Manufacturer | Toshiba | - |
| Product Category | Bipolar Transistors - Pre-Biased | - |
| RoHS | Y | - |
| Configuration | Single | - |
| Transistor Polarity | PNP | - |
| Typical Input Resistor | 47 kOhms | - |
| Typical Resistor Ratio | 2.14 | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-723-3 | - |
| DC Collector/Base Gain hfe Min | 70 | - |
| Collector Emitter Voltage VCEO Max | - 50 V | - |
| Continuous Collector Current | - 100 mA | - |
| Peak DC Collector Current | - 100 mA | - |
| Pd Power Dissipation | 150 mW | - |
| Maximum Operating Temperature | + 150 C | - |
| Series | RN2109MFV | - |
| Packaging | Reel | - |
| Emitter Base Voltage VEBO | - 15 V | - |
| Brand | Toshiba | - |
| Channel Mode | Enhancement | - |
| Maximum DC Collector Current | - 100 mA | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 8000 | - |
| Subcategory | Transistors | - |
| Unit Weight | 0.000053 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Toshiba |
RN2109MFV,L3F | Bipolar Transistors - Pre-Biased Bias Resistor PNP -.1A -50V 47kohm | |
| RN2109MFVL3F-ND | 신규 및 오리지널 |