 | | | |
| PartNumber | RN2106MFV(TPL3) | RN2106MFV | RN2106MFV(TL3,T |
| Description | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 47Kohms | ||
| Manufacturer | Toshiba | TOSHIBA | - |
| Product Category | Bipolar Transistors - Pre-Biased | IC Chips | - |
| RoHS | N | - | - |
| Configuration | Single | - | - |
| Transistor Polarity | PNP | - | - |
| Typical Input Resistor | 4.7 kOhms | - | - |
| Typical Resistor Ratio | 0.1 | - | - |
| Mounting Style | SMD/SMT | - | - |
| DC Collector/Base Gain hfe Min | 80 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | - 100 mA | - | - |
| Peak DC Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 150 mW | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | RN2106MF | - | - |
| Packaging | Reel | - | - |
| DC Current Gain hFE Max | 80 | - | - |
| Brand | Toshiba | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 8000 | - | - |
| Subcategory | Transistors | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Toshiba |
RN2106MFV(TPL3) | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 47Kohms | |
| RN2106MFV(TPL3) | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 47Kohms | ||
| RN2106MFV | 신규 및 오리지널 | ||
| RN2106MFV(TL3,T | 신규 및 오리지널 | ||
| RN2106MFV,L3F | 신규 및 오리지널 |