RN2963FE

RN2963FE vs RN2963FE(TE85LF)CT-ND vs RN2963FE(TE85LF)DKR-ND

 
PartNumberRN2963FERN2963FE(TE85LF)CT-NDRN2963FE(TE85LF)DKR-ND
Description
ManufacturerToshiba Semiconductor and Storage--
Product CategoryTransistors (BJT) - Arrays, Pre-Biased--
Series---
PackagingDigi-ReelR--
Package CaseSOT-563, SOT-666--
Mounting TypeSurface Mount--
Supplier Device PackageES6--
Power Max100mW--
Transistor Type2 PNP - Pre-Biased (Dual)--
Current Collector Ic Max100mA--
Voltage Collector Emitter Breakdown Max50V--
Resistor Base R1 Ohms22k--
Resistor Emitter Base R2 Ohms22k--
DC Current Gain hFE Min Ic Vce70 @ 10mA, 5V--
Vce Saturation Max Ib Ic300mV @ 250μA, 5mA--
Current Collector Cutoff Max100nA (ICBO)--
Frequency Transition200MHz--
제조사 부분 # 설명 RFQ
RN2963FE 신규 및 오리지널
RN2963FE(TE85LF)CT-ND 신규 및 오리지널
RN2963FE(TE85LF)DKR-ND 신규 및 오리지널
RN2963FE(TE85LF)TR-ND 신규 및 오리지널
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