RQ3E13

RQ3E130BNTB vs RQ3E130BN vs RQ3E130BNFU7TB

 
PartNumberRQ3E130BNTBRQ3E130BNRQ3E130BNFU7TB
DescriptionMOSFET 4.5V Drive Nch MOSFET
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseHSMT-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current13 A--
Rds On Drain Source Resistance4.4 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge36 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Transistor Type1 N-Channel--
BrandROHM Semiconductor--
Fall Time20 ns--
Product TypeMOSFET--
Rise Time34 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time64 ns--
Typical Turn On Delay Time14 ns--
Part # AliasesRQ3E130BN--
제조사 부분 # 설명 RFQ
RQ3E130BNTB MOSFET 4.5V Drive Nch MOSFET
RQ3E130MNTB1 MOSFET
RQ3E130MNTB1 MOSFET N-CH 30V 13A HSMT8
RQ3E130BN 신규 및 오리지널
RQ3E130BNFU7TB 신규 및 오리지널
RQ3E130BNTB MOSFET N-CH 30V 13A HSMT8
RQ3E130MN 신규 및 오리지널
RQ3E130MNTB 신규 및 오리지널
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