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| PartNumber | RQ6E080AJTCR | RQ6E085BNTCR | RQ6E085BN |
| Description | MOSFET NCH 30V 8A POWER | MOSFET Nch 30V 8.5A Si MOSFET | |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-457T-6 | SOT-457-6 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 8 A | 8.5 A | - |
| Rds On Drain Source Resistance | 16.5 mOhms | 11.1 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 500 mV | 1 V | - |
| Vgs Gate Source Voltage | 12 V | 20 V | - |
| Qg Gate Charge | 16.2 nC | 32.7 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.25 W | 1.25 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | ROHM Semiconductor | ROHM Semiconductor | - |
| Fall Time | 22 ns | 31 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 16 ns | 16 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 65 ns | 70 ns | - |
| Typical Turn On Delay Time | 20 ns | 11 ns | - |
| Part # Aliases | RQ6E080AJ | RQ6E085BN | - |
| Forward Transconductance Min | - | 8 S | - |