 | | |
| PartNumber | RSD200N05TL | RSD200N10TL |
| Description | MOSFET 4V Drive Nch MOSFET Drive Nch | MOSFET RECOMMENDED ALT 755-RSD201N10TL |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 45 V | 100 V |
| Id Continuous Drain Current | 20 A | 20 A |
| Rds On Drain Source Resistance | 20 mOhms | 52 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 12 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 20 W | 20 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Series | RSD200N05 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | ROHM Semiconductor | ROHM Semiconductor |
| Fall Time | 20 ns | 193 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 20 ns | 61 ns |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 50 ns | 128 ns |
| Typical Turn On Delay Time | 10 ns | 18 ns |
| Part # Aliases | RSD200N05 | RSD200N10 |
| Unit Weight | 0.011993 oz | 0.139332 oz |
| Height | - | 2.3 mm |
| Length | - | 6.5 mm |
| Width | - | 5.5 mm |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
| RSD200N05TL | MOSFET 4V Drive Nch MOSFET Drive Nch | ||
| RSD200N05TL | MOSFET N-CH 45V 20A CPT3 | ||
ROHM Semiconductor |
RSD200N10TL | MOSFET RECOMMENDED ALT 755-RSD201N10TL | |
| RSD200N10TL | MOSFET N-CH 100V 20A CPT3 | ||
| RSD200N05 | 신규 및 오리지널 | ||
| RSD200N05FRA | 신규 및 오리지널 | ||
| RSD200N06 | 신규 및 오리지널 | ||
| RSD200N10 | 신규 및 오리지널 | ||
| RSD200N10 TL | 신규 및 오리지널 | ||
| RSD200N10FRAT | 신규 및 오리지널 | ||
| RSD200N10FRATL | 신규 및 오리지널 |