PartNumber | SBC857BDW1T1G | SBC857BLT1G | SBC857BWT1G |
Description | Bipolar Transistors - BJT SS GP XSTR PNP 45 | Bipolar Transistors - BJT SS GP XSTR PNP 45V | Bipolar Transistors - BJT SS GP XSTR PNP 45V |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-363-6 | SOT-23-3 | SOT-323-3 |
Transistor Polarity | PNP | PNP | PNP |
Configuration | Dual | Single | Single |
Collector Emitter Voltage VCEO Max | - 45 V | - 45 V | - 45 V |
Collector Base Voltage VCBO | - 50 V | - 50 V | - 50 V |
Emitter Base Voltage VEBO | - 5 V | - 5 V | - 5 V |
Collector Emitter Saturation Voltage | - 0.65 V | - 300 mV | - 300 mV |
Maximum DC Collector Current | - 100 mA | - 200 mA | - 100 mA |
Gain Bandwidth Product fT | 100 MHz | 100 MHz | 100 MHz |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | BC857BDW1 | BC857BL | BC857BW |
DC Current Gain hFE Max | 475 at - 2 mA, - 5 V | 475 at - 2 mA, - 5 V | - |
Packaging | Reel | Reel | Reel |
Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
DC Collector/Base Gain hfe Min | 220 at - 2 mA, - 5 V | 220 at - 2 mA, - 5 V | - |
Pd Power Dissipation | 380 mW | 225 mW | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.000265 oz | 0.000282 oz | 0.000176 oz |
Technology | - | Si | - |
Continuous Collector Current | - | - 100 mA | - |