SBC817-4 stock, SBC817-4, SBC817-40LT1G


PartNumber	SBC817-40LT1G	SBC817-40LT3G	SBC817-40LT3
Description	Bipolar Transistors - BJT SS GP XSTR SPCL TR	Bipolar Transistors - Pre-Biased SS GP XSTR SPCL TR
Manufacturer	ON Semiconductor	ON Semiconductor	ON Semiconductor
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - Pre-Biased	Transistors (BJT) - Single, Pre-Biased
RoHS	Y	Y	-
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	SOT-23-3	SOT-23-3	-
Transistor Polarity	NPN	NPN	NPN
Configuration	Single	Single	Single
Collector Emitter Voltage VCEO Max	45 V	45 V	-
Collector Base Voltage VCBO	50 V	50 V	-
Emitter Base Voltage VEBO	5 V	-	-
Maximum DC Collector Current	0.5 A	-	-
Gain Bandwidth Product fT	100 MHz	-	-
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Series	BC817-40L	BC817-40L	BC817-40L
Height	0.94 mm	0.94 mm	-
Length	2.9 mm	2.9 mm	-
Packaging	Reel	Reel	Reel
Width	1.3 mm	1.3 mm	-
Brand	ON Semiconductor	ON Semiconductor	-
Continuous Collector Current	0.5 A	0.5 A	0.5 A
DC Collector/Base Gain hfe Min	250 at 100 mA, 1 V, 40 at 500 mA, 1 V	250	-
Pd Power Dissipation	300 mW	300 mW	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors - Pre-Biased	-
Qualification	AEC-Q101	AEC-Q101	-
Factory Pack Quantity	3000	10000	-
Subcategory	Transistors	Transistors	-
Unit Weight	0.001058 oz	0.000282 oz	0.050717 oz
Maximum Operating Frequency	-	100 MHz	100 MHz
Package Case	-	-	SOT-23-3
Pd Power Dissipation	-	-	300 mW
Collector Emitter Voltage VCEO Max	-	-	45 V
DC Collector Base Gain hfe Min	-	-	250

Search Part Number : "SBC817-4", Match & Start with "SBC817-4" - Total : 5

제조사	부분 #	설명
	SBC817-40LT1G	Bipolar Transistors - BJT SS GP XSTR SPCL TR
	SBC817-40LT3G	Bipolar Transistors - Pre-Biased SS GP XSTR SPCL TR
	SBC817-40LT3	신규 및 오리지널
ON Semiconductor	SBC817-40LT1G	Bipolar Transistors - BJT SS GP XSTR SPCL TR
ON Semiconductor	SBC817-40LT3G	Bipolar Transistors - Pre-Biased SS GP XSTR SPCL TR

SBC817-4