SBC847BDW1T stock, SBC847BDW1T, SBC847BDW1T1G


PartNumber	SBC847BDW1T1G	SBC847BDW1T3G
Description	Bipolar Transistors - BJT SS GP XSTR NPN 45V	Bipolar Transistors - BJT SS GP XSTR NPN 45V
Manufacturer	ON Semiconductor	ON Semiconductor
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	Y	Y
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	SOT-363-6	SOT-363-6
Transistor Polarity	NPN	NPN
Configuration	Dual	Dual
Collector Emitter Voltage VCEO Max	45 V	45 V
Collector Base Voltage VCBO	50 V	50 V
Emitter Base Voltage VEBO	6 V	6 V
Collector Emitter Saturation Voltage	0.6 V	250 mV
Maximum DC Collector Current	100 mA	100 mA
Gain Bandwidth Product fT	100 MHz	100 MHz
Minimum Operating Temperature	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C
Series	BC847BDW1	BC847BDW1
DC Current Gain hFE Max	450 at 2 mA, 5 V	450 at 2 mA, 5 V
Packaging	Reel	Reel
Brand	ON Semiconductor	ON Semiconductor
DC Collector/Base Gain hfe Min	200 at 2 mA, 5 V	200 at 2 mA, 5 V
Pd Power Dissipation	380 mW	380 mW
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors
Qualification	AEC-Q101	AEC-Q101
Factory Pack Quantity	3000	10000
Subcategory	Transistors	Transistors
Unit Weight	0.000265 oz	0.000265 oz

Search Part Number : "SBC847BDW1T", Match & Start with "SBC847BDW1T" - Total : 6

제조사	부분 #	설명
ON Semiconductor	SBC847BDW1T1G	Bipolar Transistors - BJT SS GP XSTR NPN 45V
	SBC847BDW1T3G	Bipolar Transistors - BJT SS GP XSTR NPN 45V
	SBC847BDW1T3G	Bipolar Transistors - BJT SS GP XSTR NPN 45V
	SBC847BDW1T1G	Bipolar Transistors - BJT SS GP XSTR NPN 45V
	SBC847BDW1T1G?	Trans GP BJT NPN 45V 0.1A Automotive 6-Pin SC-88 T/R
	SBC847BDW1T1G-CUT TAPE	신규 및 오리지널

SBC847BDW1T