SBC847C stock, SBC847C, SBC847CDW1T1G


PartNumber	SBC847CDW1T1G	SBC847CDXV6T1G	SBC847CDW1T1
Description	Bipolar Transistors - BJT SSP XSTR SC-88 NPN	Bipolar Transistors - BJT SS GP XSTR NPN 45V	TRANS 2NPN 45V 0.1A SOT-363
Manufacturer	ON Semiconductor	ON Semiconductor	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	Y	Y	-
Technology	Si	-	-
Mounting Style	SMD/SMT	-	-
Package / Case	SOT-363-6	-	-
Transistor Polarity	NPN	NPN	-
Configuration	Dual	-	-
Collector Emitter Voltage VCEO Max	45 V	-	-
Collector Base Voltage VCBO	50 V	-	-
Emitter Base Voltage VEBO	6 V	-	-
Collector Emitter Saturation Voltage	250 mV	-	-
Maximum DC Collector Current	100 mA	-	-
Gain Bandwidth Product fT	100 MHz	-	-
Minimum Operating Temperature	- 55 C	-	-
Maximum Operating Temperature	+ 150 C	-	-
Series	BC846C	BC847CDXV6	-
DC Current Gain hFE Max	800 at 2 mA, 5 V	-	-
Packaging	Reel	Reel	-
Brand	ON Semiconductor	ON Semiconductor	-
DC Collector/Base Gain hfe Min	420 at 2 mA, 5 V	-	-
Pd Power Dissipation	380 mW	-	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Qualification	AEC-Q101	AEC-Q101	-
Factory Pack Quantity	3000	4000	-
Subcategory	Transistors	Transistors	-
Unit Weight	0.000265 oz	-	-

Search Part Number : "SBC847C", Match & Start with "SBC847C" - Total : 11

제조사	부분 #	설명
	SBC847CDW1T1G	Bipolar Transistors - BJT SSP XSTR SC-88 NPN
	SBC847CLT1G	Bipolar Transistors - BJT SS GP XSTR SPCL TR
	SBC847CWT1G	Bipolar Transistors - BJT SS GP XSTR NPN 45V
	SBC847CDXV6T1G	Bipolar Transistors - BJT SS GP XSTR NPN 45V
	SBC847CWT3G	Bipolar Transistors - BJT SS SC70 GP XSTR NPN 45V
	SBC847CDW1T1	TRANS 2NPN 45V 0.1A SOT-363
ON Semiconductor	SBC847CDXV6T1G	TRANS 2NPN 45V 0.1A SOT-563
	SBC847CWT3G	TRANS NPN 45V 0.1A
	SBC847CWT1G	Bipolar Transistors - BJT SS GP XSTR NPN 45V
	SBC847CDW1T1G	Bipolar Transistors - BJT SSP XSTR SC-88 NPN
	SBC847CLT1G	Bipolar Transistors - BJT SS GP XSTR SPCL TR

SBC847C