SBCP

SBCP68T1G vs SBCP56T3G vs SBCP68T1G(MDCPX1)

 
PartNumberSBCP68T1GSBCP56T3GSBCP68T1G(MDCPX1)
DescriptionBipolar Transistors - BJT LOW Voltg-HIGH CURRENTBipolar Transistors - BJT SS GP XSTR NPN 80V
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-4SOT-223-4-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max20 V80 V-
Collector Base Voltage VCBO25 V100 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage0.5 V500 mV-
Gain Bandwidth Product fT60 MHz130 MHz-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBCP68BCP56-
DC Current Gain hFE Max375250 at 150 mA, 2 V-
PackagingReelReel-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current1 A--
DC Collector/Base Gain hfe Min8540 at 150 mA, 2 V-
Pd Power Dissipation1.5 W1.5 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
QualificationAEC-Q101AEC-Q101-
Factory Pack Quantity10004000-
SubcategoryTransistorsTransistors-
Unit Weight0.003951 oz0.003877 oz-
Maximum DC Collector Current-1 A-
Minimum Operating Temperature-- 65 C-
제조사 부분 # 설명 RFQ
SBCP68T1G Bipolar Transistors - BJT LOW Voltg-HIGH CURRENT
SBCP56T3G Bipolar Transistors - BJT SS GP XSTR NPN 80V
SBCP68T1G(MDCPX1) 신규 및 오리지널
SBCP69T1G 신규 및 오리지널
ON Semiconductor
ON Semiconductor
SBCP56T3G Bipolar Transistors - BJT SS GP XSTR NPN 80V
SBCP68T1G Bipolar Transistors - BJT LOW Voltg-HIGH CURRENT
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