SBCP56

SBCP56-16T1G vs SBCP56-10T1G vs SBCP56-16T1G-CUT TAPE

 
PartNumberSBCP56-16T1GSBCP56-10T1GSBCP56-16T1G-CUT TAPE
DescriptionBipolar Transistors - BJT SBN SSP SOT223 NPNBipolar Transistors - BJT SS GP XSTR NPN 80V
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-4SOT-223-4-
Transistor PolarityNPNNPN-
Collector Emitter Voltage VCEO Max80 V80 V-
Collector Base Voltage VCBO100 V100 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage0.5 V0.5 V-
Maximum DC Collector Current1 A1 A-
Gain Bandwidth Product fT130 MHz130 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesSBCP56BCP56-
DC Current Gain hFE Max250 mA160 at 150 mA, 2 V-
Height1.75 mm--
Length6.7 mm--
PackagingReelReel-
Width3.7 mm--
BrandON SemiconductorON Semiconductor-
Continuous Collector Current1 A--
DC Collector/Base Gain hfe Min2563 at 150 mA, 2 V-
Pd Power Dissipation1.5 W1.5 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
QualificationAEC-Q101AEC-Q101-
Factory Pack Quantity10001000-
SubcategoryTransistorsTransistors-
Unit Weight0.003951 oz0.003951 oz-
Technology-Si-
Configuration-Single-
제조사 부분 # 설명 RFQ
SBCP56-16T1G Bipolar Transistors - BJT SBN SSP SOT223 NPN
SBCP56-10T1G Bipolar Transistors - BJT SS GP XSTR NPN 80V
SBCP56-16T3G Bipolar Transistors - BJT SS GP XSTR NPN 80V
SBCP56T1G Bipolar Transistors - BJT SS GP XSTR NPN 80V
SBCP56T3G Bipolar Transistors - BJT SS GP XSTR NPN 80V
SBCP56-16T1G-CUT TAPE 신규 및 오리지널
ON Semiconductor
ON Semiconductor
SBCP56T3G Bipolar Transistors - BJT SS GP XSTR NPN 80V
SBCP56T1G Bipolar Transistors - BJT SS GP XSTR NPN 80V
SBCP56-10T1G Bipolar Transistors - BJT SS GP XSTR NPN 80V
SBCP56-16T1G Bipolar Transistors - BJT SBN SSP SOT223 NPN
SBCP56-16T3G Bipolar Transistors - BJT SS GP XSTR NPN 80V
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