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SEMIX2

SEMIX201GD128DS vs SEMIX202GB066HD vs SEMIX202GB066HDS

 
PartNumberSEMIX201GD128DSSEMIX202GB066HDSEMIX202GB066HDS
DescriptionIGBT MODULE, DUAL, 600V, 275A, Transistor Polarity:Dual NPN, DC Collector Current:275A, Collector Emitter Saturation Voltage Vce(on):1.45V, Power Dissipation Pd:45W, Collector Emitter Voltage V(b
제조사 부분 # 설명 RFQ
SEMIX201GD128DS 신규 및 오리지널
SEMIX202GB066HD 신규 및 오리지널
SEMIX202GB066HDS IGBT MODULE, DUAL, 600V, 275A, Transistor Polarity:Dual NPN, DC Collector Current:275A, Collector Emitter Saturation Voltage Vce(on):1.45V, Power Dissipation Pd:45W, Collector Emitter Voltage V(b
SEMIX202GB128D 신규 및 오리지널
SEMIX202GB128DS 신규 및 오리지널
SEMIX202GB12E4S 신규 및 오리지널
SEMIX202GB12T4S 신규 및 오리지널
SEMIX202GB12V4S 신규 및 오리지널
SEMIX202GB12VS IGBT, MODULE, 1.2KV, 310A, Transistor Polarity:Dual NPN, DC Collector Current:310A, Collector Emitter Saturation Voltage Vce(on):1.75V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:
SEMIX223GD12E4C 신규 및 오리지널
SEMIX241DH16S THYRISTOR DIODE MODULE 300A, 1.6KV, SCR Module Type:Bridge Rectifier, Three Phase - SCR / Diode, Peak Repetitive Off-State Voltage, Vdrm:1.6kV, Gate Trigger Current Max, Igt:150mA, Current It av:2
SEMIX241MD008S 신규 및 오리지널
SEMIX251GD126HDS IGBT, 1200 V, 250 A @ 25 DegC, 260 A @ 80 DegC, 1.7 V @ 25 degC
SEMIX252GB126HD 신규 및 오리지널
SEMIX252GB126HDS IGBT MODULE, DUAL, 1.2KV, 242A, Transistor Polarity:Dual NPN, DC Collector Current:242A, Collector Emitter Saturation Voltage Vce(on):1.7V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)
SEMIX253GB126HD 신규 및 오리지널
SEMIX253GD126HDC 신규 및 오리지널
SEMIX291D16S 신규 및 오리지널
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