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| PartNumber | SEMIX402GA066HDS | SEMIX402GAL066HDS | SEMIX402GB066HD |
| Description | SEMIX, Trench IGBT Module, 600V, 400A | ||
| Manufacturer | - | - | SEMIKRO |
| Product Category | - | - | Module |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
| SEMIX402GA066HDS | 신규 및 오리지널 | ||
| SEMIX402GAL066HDS | SEMIX, Trench IGBT Module, 600V, 400A | ||
| SEMIX402GB066HD | 신규 및 오리지널 | ||
| SEMIX402GB066HDS | IGBT MODULE, DUAL, 600V, 530A, Transistor Polarity:Dual NPN, DC Collector Current:530A, Collector Emitter Saturation Voltage Vce(on):1.45V, Power Dissipation Pd:45W, Collector Emitter Voltage V(b | ||
| SEMIX403GB128D | 신규 및 오리지널 | ||
| SEMIX404GB12E4S | SEMIX, Trench IGBT Module, 1200V, 400A | ||
| SEMIX452GAR12 | 신규 및 오리지널 | ||
| SEMIX452GB126HD | 신규 및 오리지널 | ||
| SEMIX453GB12E4 | 신규 및 오리지널 | ||
| SEMIX453GB12E4P | 신규 및 오리지널 | ||
| SEMIX453GB12E4S | IGBT, MODULE, 1.2KV, 683A, SEMIX 3S, Transistor Polarity:Dual N Channel, DC Collector Current:683A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Vo | ||
| SEMIX453GB12T4S | Insulated Gate Bipolar Transistor, 685A I(C), 1200V V(BR)CES, N-Channel | ||
| SEMIX453GB12VS | 신규 및 오리지널 | ||
| SEMIX453GB176HDS | IGBT MODULE, 1.7KV, 444A, SEMIX 3S, Transistor Polarity:N Channel, DC Collector Current:444A, Collector Emitter Saturation Voltage Vce(on):1.7kV, Power Dissipation Pd:-, Collector Emitter Voltage | ||
| SEMIX453GD12VC | 신규 및 오리지널 |
