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| PartNumber | SGH40N60UFDTU + | SGH40N60UFDTU,G40N60UFD, | SGH40N60UFDTU |
| Description | IGBT Transistors Dis High Perf IGBT | ||
| Manufacturer | - | - | Fairchild Semiconductor |
| Product Category | - | - | IGBTs - Single |
| Series | - | - | - |
| Packaging | - | - | Tube |
| Part Aliases | - | - | SGH40N60UFDTU_NL |
| Unit Weight | - | - | 0.225789 oz |
| Mounting Style | - | - | Through Hole |
| Package Case | - | - | TO-3P-3, SC-65-3 |
| Input Type | - | - | Standard |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-3PN |
| Configuration | - | - | Single |
| Power Max | - | - | 160W |
| Reverse Recovery Time trr | - | - | 60ns |
| Current Collector Ic Max | - | - | 40A |
| Voltage Collector Emitter Breakdown Max | - | - | 600V |
| IGBT Type | - | - | - |
| Current Collector Pulsed Icm | - | - | 160A |
| Vce on Max Vge Ic | - | - | 2.6V @ 15V, 20A |
| Switching Energy | - | - | 160μJ (on), 200μJ (off) |
| Gate Charge | - | - | 97nC |
| Td on off 25°C | - | - | 15ns/65ns |
| Test Condition | - | - | 300V, 20A, 10 Ohm, 15V |
| Pd Power Dissipation | - | - | 160 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Collector Emitter Voltage VCEO Max | - | - | 600 V |
| Collector Emitter Saturation Voltage | - | - | 2.1 V |
| Continuous Collector Current at 25 C | - | - | 40 A |
| Gate Emitter Leakage Current | - | - | +/- 100 nA |
| Maximum Gate Emitter Voltage | - | - | +/- 20 V |
| Continuous Collector Current Ic Max | - | - | 40 A |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
| SGH40N60UFDTU + | 신규 및 오리지널 | ||
| SGH40N60UFDTU,G40N60UFD, | 신규 및 오리지널 | ||
| SGH40N60UFDTU,SGH40N60UF | 신규 및 오리지널 | ||
ON Semiconductor |
SGH40N60UFDTU | IGBT Transistors Dis High Perf IGBT |