SH8K4

SH8K41GZETB vs SH8K4 vs SH8K41

 
PartNumberSH8K41GZETBSH8K4SH8K41
DescriptionMOSFET 4V Drive Nch+Nch MOSFET
ManufacturerROHM Semiconductor-Rohm Semiconductor
Product CategoryMOSFET-FETs - Arrays
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT--
Package / CaseSOP-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current3.4 A--
Rds On Drain Source Resistance90 mOhms, 90 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge6.6 nC, 6.6 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel-Digi-ReelR Alternate Packaging
Transistor Type2 N-Channel--
BrandROHM Semiconductor--
Forward Transconductance Min3 S--
Fall Time12 ns, 12 ns--
Product TypeMOSFET--
Rise Time15 ns, 15 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns, 40 ns--
Typical Turn On Delay Time12 ns, 12 ns--
Part # AliasesSH8K41--
Series--SH8K41
Package Case--8-SOIC (0.154", 3.90mm Width)
Operating Temperature--150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--8-SOP
FET Type--2 N-Channel (Dual)
Power Max--1.4W
Drain to Source Voltage Vdss--80V
Input Capacitance Ciss Vds--600pF @ 10V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--3.4A
Rds On Max Id Vgs--130 mOhm @ 3.4A, 10V
Vgs th Max Id--2.5V @ 1mA
Gate Charge Qg Vgs--6.6nC @ 5V
제조사 부분 # 설명 RFQ
SH8K41GZETB MOSFET 4V Drive Nch+Nch MOSFET
SH8K4TB1 MOSFET Nch+Nch 30V 9A MOSFET
SH8K4 신규 및 오리지널
SH8K41 신규 및 오리지널
SH8K41GZETB MOSFET 2N-CH 80V 3.4A 8SOP
SH8K4TB 신규 및 오리지널
SH8K4TB1 MOSFET 2N-CH 30V 9A SOP8
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