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| PartNumber | SI3447CDV-T1-E3 | SI3447CDV-T1-GE3 | SI3447CDV-T1-G |
| Description | MOSFET RECOMMENDED ALT 78-SI3493DDV-T1-GE3 | MOSFET P-CH 12V 7.8A 6-TSOP | |
| Manufacturer | Vishay | VISHAY | VISHAY |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSOP-6 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Reel | Reel |
| Series | SI3 | - | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SI3447CDV-E3 | - | - |
| Unit Weight | 0.000705 oz | 0.000705 oz | 0.000705 oz |
| Part Aliases | - | SI3447CDV-GE3 | SI3447CDV-GE3 |
| Package Case | - | TSOP-6 | TSOP-6 |
| Number of Channels | - | 1 Channel | 1 Channel |
| Configuration | - | Single | Single |
| Transistor Type | - | 1 P-Channel | 1 P-Channel |
| Pd Power Dissipation | - | 2 W | 2 W |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Fall Time | - | 20 ns | 20 ns |
| Rise Time | - | 40 ns | 40 ns |
| Vgs Gate Source Voltage | - | 8 V | 8 V |
| Id Continuous Drain Current | - | 6.3 A | 6.3 A |
| Vds Drain Source Breakdown Voltage | - | - 12 V | - 12 V |
| Vgs th Gate Source Threshold Voltage | - | - 1 V | - 1 V |
| Rds On Drain Source Resistance | - | 36 mOhms | 36 mOhms |
| Transistor Polarity | - | P-Channel | P-Channel |
| Typical Turn Off Delay Time | - | 35 ns | 35 ns |
| Typical Turn On Delay Time | - | 20 ns | 20 ns |
| Qg Gate Charge | - | 20 nC | 20 nC |
| Channel Mode | - | Enhancement | Enhancement |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI3447CDV-T1-E3 | MOSFET RECOMMENDED ALT 78-SI3493DDV-T1-GE3 | |
Vishay |
SI3447CDV-T1-E3 | IGBT Transistors MOSFET 12V 7.8A 3.0W 36mohm @ 4.5V | |
| SI3447CDV-T1-GE3 | MOSFET P-CH 12V 7.8A 6-TSOP | ||
| SI3447CDV-T1-G | 신규 및 오리지널 |