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| PartNumber | SI4172DY-T1-GE3 | SI4172DY-T1-G3 | SI4172DY-T1-G4 |
| Description | IGBT Transistors MOSFET 30V 15A 4.5W | ||
| Manufacturer | VISHAY | - | - |
| Product Category | FETs - Single | - | - |
| Packaging | Reel | - | - |
| Part Aliases | SI4172DY-GE3 | - | - |
| Unit Weight | 0.006596 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | SOIC-Narrow-8 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single Quad Drain Triple Source | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 4.5 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 8 ns | - | - |
| Rise Time | 10 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 15 A | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Rds On Drain Source Resistance | 12 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 16 ns | - | - |
| Typical Turn On Delay Time | 8 ns | - | - |
| Qg Gate Charge | 6.8 nC | - | - |
| Forward Transconductance Min | 52 S | - | - |
| Channel Mode | Enhancement | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay |
SI4172DY-T1-GE3 | IGBT Transistors MOSFET 30V 15A 4.5W | |
| SI4172DY-T1-G3 | 신규 및 오리지널 | ||
| SI4172DY-T1-G4 | 신규 및 오리지널 |