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| PartNumber | SI4420DYTRPBF | SI4420DYTRPBF. | SI4420DYTR |
| Description | MOSFET 30V 1 N-CH HEXFET 9mOhms 52nC | MOSFET N-CH 30V 12.5A 8-SOIC | |
| Manufacturer | Infineon | - | IR |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SO-8 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 12.5 A | - | - |
| Rds On Drain Source Resistance | 13 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 52 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | - | Single Quad Drain Triple Source |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Reel | - | Reel |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Type | HEXFET Power MOSFET | - | - |
| Width | 3.9 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 29 S | - | - |
| Fall Time | 47 ns | - | 47 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns | - | 10 ns |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 55 ns | - | 55 ns |
| Typical Turn On Delay Time | 15 ns | - | 15 ns |
| Part # Aliases | SP001567504 | - | - |
| Unit Weight | 0.017870 oz | - | 0.017870 oz |
| Package Case | - | - | SO-8 |
| Pd Power Dissipation | - | - | 2.5 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 12.5 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1 V |
| Rds On Drain Source Resistance | - | - | 13 mOhms |
| Qg Gate Charge | - | - | 52 nC |
| Forward Transconductance Min | - | - | 29 S |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon / IR |
SI4420DYTRPBF | MOSFET 30V 1 N-CH HEXFET 9mOhms 52nC | |
| SI4420DYTRPBF. | 신규 및 오리지널 | ||
Infineon Technologies |
SI4420DYTR | MOSFET N-CH 30V 12.5A 8-SOIC | |
| SI4420DYTRPBF | MOSFET N-CH 30V 12.5A 8-SOIC |