 |  | | |
| PartNumber | SI5443DC-T1-E3 | SI5443DC | SI5443DC-T1 |
| Description | RF Bipolar Transistors MOSFET 20V 4.9A 2.5W | MOSFET RECOMMENDED ALT 781-SI5441BDC-T1-E3 | |
| Manufacturer | VISHAY | - | - |
| Product Category | FETs - Single | - | - |
| Packaging | Reel | - | - |
| Part Aliases | SI5443DC-E3 | - | - |
| Unit Weight | 0.002998 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Tradename | TrenchFET | - | - |
| Package Case | ChipFET-8 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Pd Power Dissipation | 1.3 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 30 ns | - | - |
| Rise Time | 30 ns | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Id Continuous Drain Current | 3.6 A | - | - |
| Vds Drain Source Breakdown Voltage | - 20 V | - | - |
| Rds On Drain Source Resistance | 65 mOhms | - | - |
| Transistor Polarity | P-Channel | - | - |
| Typical Turn Off Delay Time | 50 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Channel Mode | Enhancement | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI5443DC-T1-GE3 | MOSFET 20V 4.9A 2.5W 65mohm @ 4.5V | |
Vishay |
SI5443DC-T1-E3 | RF Bipolar Transistors MOSFET 20V 4.9A 2.5W | |
| SI5443DC-T1-GE3 | RF Bipolar Transistors MOSFET 20V 4.9A 2.5W 65mohm @ 4.5V | ||
| SI5443DC | 신규 및 오리지널 | ||
| SI5443DC-T1 | MOSFET RECOMMENDED ALT 781-SI5441BDC-T1-E3 | ||
| SI5443DC-TI | 신규 및 오리지널 |