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| PartNumber | SI6968BEDQ-T1-E3-CUT TAPE | SI6968BEDQ-T1-E3 | SI6968BEDQ-T1-E3. |
| Description | MOSFET 2N-CH 20V 5.2A 8TSSOP | Transistor Polarity:Dual N Channel, Continuous Drain Current Id:5.2A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.0165ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:1.6V, Po | |
| Manufacturer | - | Vishay Siliconix | - |
| Product Category | - | FETs - Arrays | - |
| Series | - | TrenchFETR | - |
| Packaging | - | Digi-ReelR Alternate Packaging | - |
| Part Aliases | - | SI6968BEDQ-E3 | - |
| Unit Weight | - | 0.005573 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | 8-TSSOP (0.173", 4.40mm Width) | - |
| Technology | - | Si | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Number of Channels | - | 2 Channel | - |
| Supplier Device Package | - | 8-TSSOP | - |
| Configuration | - | Dual | - |
| FET Type | - | 2 N-Channel (Dual) Common Drain | - |
| Power Max | - | 1W | - |
| Transistor Type | - | 2 N-Channel | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | - | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 5.2A | - |
| Rds On Max Id Vgs | - | 22 mOhm @ 6.5A, 4.5V | - |
| Vgs th Max Id | - | 1.6V @ 250μA | - |
| Gate Charge Qg Vgs | - | 18nC @ 4.5V | - |
| Pd Power Dissipation | - | 1.5 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 510 ns | - |
| Rise Time | - | 330 ns | - |
| Vgs Gate Source Voltage | - | 12 V | - |
| Id Continuous Drain Current | - | 6.5 A | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Rds On Drain Source Resistance | - | 22 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 860 ns | - |
| Typical Turn On Delay Time | - | 245 ns | - |
| Forward Transconductance Min | - | 30 S | - |
| Channel Mode | - | Enhancement | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
| SI6968BEDQ-T1-E3-CUT TAPE | 신규 및 오리지널 | ||
| SI6968BEDQ-T1-E3. | Transistor Polarity:Dual N Channel, Continuous Drain Current Id:5.2A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.0165ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:1.6V, Po | ||
Vishay |
SI6968BEDQ-T1-E3 | MOSFET 2N-CH 20V 5.2A 8TSSOP |