SI7454D

SI7454DDP-T1-GE3 vs SI7454DDP-T1-E3 vs SI7454DP

 
PartNumberSI7454DDP-T1-GE3SI7454DDP-T1-E3SI7454DP
DescriptionMOSFET 100V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current21 A--
Rds On Drain Source Resistance27 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge19.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation29.7 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
Height1.04 mm--
Length6.15 mm--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandVishay / Siliconix--
Forward Transconductance Min19 S--
Fall Time9 ns--
Product TypeMOSFET--
Rise Time13 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time16 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesSI7454CDP-T1-GE3--
Unit Weight0.017870 oz--
제조사 부분 # 설명 RFQ
Vishay / Siliconix
Vishay / Siliconix
SI7454DP-T1-E3 MOSFET 100V, 40 [email protected]
SI7454DP-T1-GE3 MOSFET 100V Vds 20V Vgs PowerPAK SO-8
SI7454DDP-T1-GE3 MOSFET 100V Vds 20V Vgs PowerPAK SO-8
SI7454DP-T1-E3-CUT TAPE 신규 및 오리지널
SI7454DDP-T1-E3 신규 및 오리지널
SI7454DP 신규 및 오리지널
SI7454DP-T1 MOSFET RECOMMENDED ALT 781-SI7454DP-E3
Vishay
Vishay
SI7454DDP-T1-GE3 MOSFET N-CH 100V 21A PPAK SO-8
SI7454DP-T1-E3 MOSFET N-CH 100V 5A PPAK SO-8
SI7454DP-T1-GE3 MOSFET N-CH 100V 5A PPAK SO-8
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