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| PartNumber | SI7840BDP-T1-GE3 | SI7840BDP-T1-E3 | SI7840BDP |
| Description | MOSFET 30V 16.5A 4.1W 8.5mohm @ 10V | RF Bipolar Transistors MOSFET 30V 14A 4.1W 8.5mohm @ 10V | |
| Manufacturer | Vishay | VISHAY | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | E | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-SO-8 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Reel | - |
| Height | 1.04 mm | - | - |
| Length | 6.15 mm | - | - |
| Series | SI7 | - | - |
| Width | 5.15 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SI7840BDP-GE3 | - | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | - |
| Part Aliases | - | SI7840BDP-E3 | - |
| Package Case | - | SO-8 | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 1.8 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 14 ns | - |
| Rise Time | - | 14 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 11 A | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Rds On Drain Source Resistance | - | 8.5 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 39 ns | - |
| Typical Turn On Delay Time | - | 17 ns | - |
| Channel Mode | - | Enhancement | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7840BDP-T1-GE3 | MOSFET 30V 16.5A 4.1W 8.5mohm @ 10V | |
Vishay |
SI7840BDP-T1-GE3 | RF Bipolar Transistors MOSFET 30V 16.5A 4.1W 8.5mohm @ 10V | |
| SI7840BDP-T1-E3 | RF Bipolar Transistors MOSFET 30V 14A 4.1W 8.5mohm @ 10V | ||
| SI7840BDP | 신규 및 오리지널 |