 |  | | |
| PartNumber | SIA447DJ-T1-GE3 | SIA447DJ | SIA447DJ-TI-GE3 |
| Description | MOSFET -12V Vds 8V Vgs PowerPAK SC-70 | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-SC70-6 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 12 V | - | - |
| Id Continuous Drain Current | 12 A | - | - |
| Rds On Drain Source Resistance | 11 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 850 mV | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 80 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 19 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET, PowerPAK | - | - |
| Packaging | Reel | - | - |
| Height | 0.75 mm | - | - |
| Length | 2.05 mm | - | - |
| Series | SIA | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 2.05 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 35 S | - | - |
| Fall Time | 25 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 30 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 60 ns | - | - |
| Typical Turn On Delay Time | 30 ns | - | - |
| Part # Aliases | SIA447DJ-GE3 | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIA447DJ-T1-GE3 | MOSFET -12V Vds 8V Vgs PowerPAK SC-70 | |
| SIA447DJ | 신규 및 오리지널 | ||
| SIA447DJ-TI-GE3 | 신규 및 오리지널 | ||
Vishay |
SIA447DJ-T1-GE3 | MOSFET P-CH 12V 12A SC-70-6L |