| PartNumber | SIHA25N50E-E3 | SIHA25N60EFL-E3 | SIHA2N80E-GE3 |
| Description | MOSFET 500V Vds 30V Vgs TO-220 FULLPAK | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK | MOSFET 800V Vds 30V Vgs TO-220 FULLPAK |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220FP-3 | TO-220FP-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 550 V | 650 V | 800 V |
| Id Continuous Drain Current | 26 A | 25 A | 2.8 A |
| Rds On Drain Source Resistance | 145 mOhms | 127 mOhms | 2.75 Ohms |
| Vgs th Gate Source Threshold Voltage | 4 V | 5 V | 2 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 57 nC | 50 nC | 19.6 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 35 W | 39 W | 29 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | - |
| Series | E | SIH | E |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 29 ns | 21 ns | 27 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 36 ns | 39 ns | 7 ns |
| Factory Pack Quantity | 50 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 57 ns | 47 ns | 19 ns |
| Typical Turn On Delay Time | 19 ns | 25 ns | 11 ns |
| Unit Weight | 0.211644 oz | 0.068784 oz | - |
| Height | - | 1.8 mm | - |
| Length | - | 6.5 mm | - |
| Width | - | 3.5 mm | - |
| Forward Transconductance Min | - | - | 1 S |