 | | |
| PartNumber | SIHFB20N50K-E3 | SIHFB11N50A-E3 |
| Description | MOSFET RECOMMENDED ALT 781-SIHP18N50C-E3 | MOSFET RECOMMENDED ALT 781-SIHP12N50C-E3 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V |
| Id Continuous Drain Current | 20 A | 11 A |
| Rds On Drain Source Resistance | 210 mOhms | 520 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 2 V |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Qg Gate Charge | 110 nC | 52 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 280 W | 170 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Height | 15.49 mm | 15.49 mm |
| Length | 10.41 mm | 10.41 mm |
| Series | SIHF | SIHF |
| Width | 4.7 mm | 4.7 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 1 | 1 |
| Subcategory | MOSFETs | MOSFETs |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHFB20N50K-E3 | MOSFET RECOMMENDED ALT 781-SIHP18N50C-E3 | |
| SIHFB11N50A-E3 | MOSFET RECOMMENDED ALT 781-SIHP12N50C-E3 | ||
Vishay |
SIHFB11N50A-E3 | MOSFET N-CH 500V 11A TO220AB | |
| SIHFB20N50K-E3 | MOSFET N-CH 500V 20A TO220AB | ||
| SIHFB16N50K-E3 | 신규 및 오리지널 | ||
| SIHFB18N50K-E3 | 신규 및 오리지널 | ||
| SIHFB9N65A | 신규 및 오리지널 | ||
| SIHFBC30ASTL-E3A | 신규 및 오리지널 | ||
| SIHFBC40AS-E3 | 신규 및 오리지널 | ||
| SIHFBE30 | 신규 및 오리지널 | ||
| SIHFBE30S-GE3 | 신규 및 오리지널 | ||
| SIHFBF20S | 신규 및 오리지널 | ||
| SIHFBF20STR-E3 | 신규 및 오리지널 | ||
| SIHFBF20STRL-GE3 | Transistor MOSFET N-CH 900V 1.7A 3-Pin TO-263 T/R (Alt: SIHFBF20STRL-GE3) |