 | |  | |
| PartNumber | SIHH21N65EF-T1-GE3 | SIHH21N65E-T1-GE3 | SIHH21N65EF |
| Description | MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8 | MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-8x8-4 | PowerPAK-8x8-4 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Id Continuous Drain Current | 20.3 A | 20.3 A | - |
| Rds On Drain Source Resistance | 148 mOhms | 148 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 66 nC | 66 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 156 W | 156 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Series | EF | EF | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Fall Time | 44 ns | 44 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 46 ns | 46 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 69 ns | 69 ns | - |
| Typical Turn On Delay Time | 26 ns | 26 ns | - |
| Height | - | 1 mm | - |
| Length | - | 8 mm | - |
| Width | - | 8 mm | - |
| Unit Weight | - | 0.001764 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHH21N65EF-T1-GE3 | MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8 | |
| SIHH21N65E-T1-GE3 | MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8 | ||
| SIHH21N65EF | 신규 및 오리지널 | ||
Vishay |
SIHH21N65E-T1-GE3 | Trans MOSFET N-CH 650V 20.3A 4-Pin PowerPAK EP T/R | |
| SIHH21N65EF-T1-GE3 | MOSFET N-CH 650V 19.8A POWERPAK |