 |  | | |
| PartNumber | SIR800ADP-T1-GE3 | SIR800ADP-T1-RE3 | SIR798DP-T1-GE3 |
| Description | MOSFET 20V Vds 12V Vgs PowerPAK SO-8 | MOSFET 20V Vds; 12/-8V Vgs PowerPAK SO-8 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 | PowerPAK-SO-8 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
| Id Continuous Drain Current | 177 A | 177 A | - |
| Rds On Drain Source Resistance | 1.35 mOhms | 1.35 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 600 mV | 0.6 V | - |
| Vgs Gate Source Voltage | 12 V, - 8 V | - 8 V, 12 V | - |
| Qg Gate Charge | 53 nC | 53 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 62.5 W | 62.5 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Packaging | Reel | Reel | Reel |
| Series | SIR | SIR | SIR |
| Transistor Type | 1 N-Channel TrenchFET Power MOSFET | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 60 S | 60 S | - |
| Fall Time | 10 ns | 10 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 13 ns | 13 ns | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 40 ns | 40 ns | - |
| Typical Turn On Delay Time | 20 ns | 20 ns | - |
| Height | - | - | 1.04 mm |
| Length | - | - | 6.15 mm |
| Width | - | - | 5.15 mm |
| Part # Aliases | - | - | SIR798DP-GE3 |
| Unit Weight | - | - | 0.017870 oz |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIR804DP-T1-GE3 | MOSFET 100V Vds 20V Vgs PowerPAK SO-8 | |
| SIR826DP-T1-GE3 | MOSFET 80V 4.8mOhm@10V 60A N-Ch MV T-FET | ||
| SIR800DP-T1-GE3 | MOSFET 20V Vds 12V Vgs PowerPAK SO-8 | ||
| SIR800ADP-T1-GE3 | MOSFET 20V Vds 12V Vgs PowerPAK SO-8 | ||
| SIR800ADP-T1-RE3 | MOSFET 20V Vds; 12/-8V Vgs PowerPAK SO-8 | ||
| SIR826ADP-T1-GE3 | MOSFET 80V Vds 20V Vgs PowerPAK SO-8 | ||
| SIR812DP-T1-GE3 | MOSFET 30V 60A 104W 1.45mohm @ 10V | ||
| SIR826BDP-T1-RE3 | MOSFET 80V Vds 20V Vgs PowerPAK SO-8 | ||
| SIR820DP-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | ||
| SIR800DP-T1-RE3 | MOSFET 20V Vds 12V Vgs PowerPAK SO-8 | ||
| SIR826DP-T1-RE3 | MOSFET 80V Vds TrenchFET PowerPAK SO-8 | ||
| SIR802DP-T1-GE3 | MOSFET RECOMMENDED ALT 78-SIRA14DP-T1-GE3 | ||
| SIR818DP-T1-GE3 | MOSFET 30 Volts 50 Amps 69 Watts | ||
| SIR808DP-T1-GE3 | MOSFET RECOMMENDED ALT 78-SIRA18ADP-T1-GE3 | ||
| SIR798DP-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | ||
Vishay |
SIR812DP-T1-GE3 | IGBT Transistors MOSFET 30V 60A 104W 1.45mohm @ 10V | |
| SIR808DP-T1-GE3 | RF Bipolar Transistors MOSFET 25 Volts 20 Amps 29.8 Watts | ||
| SIR788DP-T1-GE3 | MOSFET N-CH 30V 60A PPAK SO-8 | ||
| SIR798DP-T1-GE3 | MOSFET N-CH 30V 60A POWERPAKSO-8 | ||
| SIR800DP-T1-GE3 | MOSFET N-CH 20V 50A PPAK SO-8 | ||
| SIR802DP-T1-GE3 | MOSFET N-CH 20V 30A PPAK SO-8 | ||
| SIR804DP-T1-GE3 | MOSFET N-CH 100V 60A PPAK SO-8 | ||
| SIR814DP-T1-GE3 | MOSFET N-CH 40V 60A PPAK SO-8 | ||
| SIR818DP-T1-GE3 | MOSFET N-CH 30V 50A PPAK SO-8 | ||
| SIR820DP-T1-GE3 | MOSFET N-CH 30V 40A POWERPAKSO-8 | ||
| SIR826ADP-T1-GE3 | MOSFET N-CH 80V 60A PPAK SO-8 | ||
| SIR826DP-T1-GE3 | MOSFET N-CH 80V 60A PPAK SO-8 | ||
| SIR800ADP-T1-GE3 | N-Channel 20-V (D-S) MOSFET PowerPAK SO-8 1G SG DUV 2 mil , 1.35 m @ 10V m @ 7.5V 1.75 m @ 4.5V | ||
| SIR800ADP-T1-RE3 | MOSFET N-CH 20V POWERPAK SO8 SNG | ||
| SIR800DP-T1-RE3 | MOSFET N-CH 20V 50A POWERPAKSO-8 | ||
| SIR826BDP-T1-RE3 | N-Channel 80-V (D-S) MOSFET PowerPAK SO-8 250M SG 2 mil , 5.1 m @ 10V 4.9 m @ 7.5V m @ 4.5V | ||
| SIR826DP-T1-RE3 | MOSFET N-CH 80V 60A POWERPAKSO-8 | ||
| SIR788DPT1GE3 | Power Field-Effect Transistor, 60A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SIR798DP-T1-E3 | 신규 및 오리지널 | ||
| SIR800 | 신규 및 오리지널 | ||
| SIR800DP | 신규 및 오리지널 | ||
| SIR802DP | 신규 및 오리지널 | ||
| SIR802DP-T1-E3 | 신규 및 오리지널 | ||
| SIR808DP | 신규 및 오리지널 | ||
| SIR808DP-T1-E3 | 신규 및 오리지널 | ||
| SIR81004F00A1 | 신규 및 오리지널 | ||
| SIR818DP | 신규 및 오리지널 | ||
| SIR818DP-T1-E3 | 신규 및 오리지널 | ||
| SIR820DP | 신규 및 오리지널 | ||
| SIR820DP-T1-E3 | 신규 및 오리지널 | ||
| SIR82609 | 신규 및 오리지널 | ||
| SIR826DP | 신규 및 오리지널 | ||
| SIR8313C | 신규 및 오리지널 | ||
| SIR836DP | 신규 및 오리지널 | ||
| SIR836DP-T1-E3 | 신규 및 오리지널 |