| PartNumber | SIR106DP-T1-RE3 | SIR104DP-T1-RE3 | SiR108DP-T1-RE3 |
| Description | MOSFET 100V Vds 20V Vgs PowerPAK SO-8 | MOSFET 100V Vds 20V Vgs PowerPAK SO-8 | MOSFET 100V Vds 20V Vgs PowerPAK SO-8 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 | PowerPAK-SO-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
| Id Continuous Drain Current | 65.8 A | 79 A | 45 A |
| Rds On Drain Source Resistance | 6.6 mOhms | 7.4 mOhms | 13.5 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 10 V | 7.5 V | 20 V |
| Qg Gate Charge | 42.5 nC | 56 nC | 41.5 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 83.3 W | 100 W | 65.7 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | - |
| Packaging | Reel | Reel | Reel |
| Series | SIR | SIR | SIR |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 6 ns | 7 ns | 6 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 7 ns | 7 ns | 6 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 27 ns | 29 ns | 22 ns |
| Typical Turn On Delay Time | 15 ns | 7 ns | 13 ns |
| Forward Transconductance Min | - | - | 48 S |