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| PartNumber | SIR472DP-T1-GE | SIR472DP-T1-GE3 | SIR472DP-T1-GE3(R472) |
| Description | MOSFET N-CH 30V 20A PPAK SO-8 | ||
| Manufacturer | - | VISHAY | - |
| Product Category | - | FETs - Single | - |
| Series | - | SIRxxxDP | - |
| Packaging | - | Reel | - |
| Part Aliases | - | SIR472DP-GE3 | - |
| Unit Weight | - | 0.017870 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | SO-8 | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 3.9 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 10 ns | - |
| Rise Time | - | 12 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 20 A | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Rds On Drain Source Resistance | - | 12.2 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 16 ns | - |
| Typical Turn On Delay Time | - | 16 ns | - |
| Forward Transconductance Min | - | 52 S | - |
| Channel Mode | - | Enhancement | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
| SIR472DP-T1-GE | 신규 및 오리지널 | ||
| SIR472DP-T1-GE3(R472) | 신규 및 오리지널 | ||
| SIR472DP-T1-GE3. | 신규 및 오리지널 | ||
Vishay |
SIR472DP-T1-GE3 | MOSFET N-CH 30V 20A PPAK SO-8 |