PartNumber | SIR606BDP-T1-RE3 | SIR606DP-T1-GE3 | SIR608DP-T1-RE3 |
Description | MOSFET 100V Vds 20V Vgs PowerPAK SO-8 | MOSFET 100V Vds 20V Vgs PowerPAK SO-8 | MOSFET 45V Vds; 20/-16V Vgs PowerPAK SO-8 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 | PowerPAK SO-8 |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | - | 45 V |
Id Continuous Drain Current | 38.7 A | - | 208 A |
Rds On Drain Source Resistance | 14.5 mOhms | - | 1.2 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | - | 1.1 V |
Vgs Gate Source Voltage | 10 V | - | 20 V, - 16 V |
Qg Gate Charge | 20 nC | - | 167 nC |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 62.5 W | - | 104 W |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | - |
Packaging | Reel | Reel | Reel |
Series | SIR | SIR | E |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 5 ns | - | 8 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 5 ns | - | 10 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 19 ns | - | 50 ns |
Typical Turn On Delay Time | 12 ns | - | 19 ns |
Height | - | 1.04 mm | - |
Length | - | 6.15 mm | - |
Width | - | 5.15 mm | - |
Unit Weight | - | 0.017870 oz | - |
Forward Transconductance Min | - | - | 120 S |
제조사 | 부분 # | 설명 | RFQ |
---|---|---|---|
Vishay / Siliconix |
SIR606BDP-T1-RE3 | MOSFET 100V Vds 20V Vgs PowerPAK SO-8 | |
SIR638ADP-T1-RE3 | MOSFET 40V Vds 20V Vgs PowerPAK SO-8 | ||
SIR626DP-T1-RE3 | MOSFET 60V Vds 20V Vgs PowerPAK SO-8 | ||
SIR624DP-T1-GE3 | MOSFET 200V Vds 20V Vgs PowerPAK SO-8 | ||
SIR638DP-T1-GE3 | MOSFET 40V Vds 20V Vgs PowerPAK SO-8 | ||
SIR616DP-T1-GE3 | MOSFET 200V Vds 20V Vgs PowerPAK SO-8 | ||
SIR632DP-T1-RE3 | MOSFET 150V Vds 20V Vgs PowerPAK SO-8 | ||
SIR622DP-T1-GE3 | MOSFET 150V Vds 20V Vgs PowerPAK SO-8 | ||
SIR606DP-T1-GE3 | MOSFET 100V Vds 20V Vgs PowerPAK SO-8 | ||
SIR640ADP-T1-GE3 | MOSFET 40V Vds 20V Vgs PowerPAK SO-8 | ||
SIR610DP-T1-RE3 | MOSFET 200V Vds 20V Vgs PowerPAK SO-8 | ||
SIR622DP-T1-RE3 | MOSFET 150V Vds; 20V Vgs PowerPAK SO-8 | ||
SIR608DP-T1-RE3 | MOSFET 45V Vds; 20/-16V Vgs PowerPAK SO-8 | ||
SIR626LDP-T1-RE3 | MOSFET 60V Vds; 20V Vgs PowerPAK SO-8 | ||
SIR638DP-T1-RE3 | MOSFET 40V Vds 20V Vgs PowerPAK SO-8 | ||
SIR624DP-T1-RE3 | MOSFET 200V Vds 20V Vgs PowerPAK SO-8 | ||
SIR618DP-T1-GE3 | MOSFET 200V Vds 20V Vgs PowerPAK SO-8 | ||
SIR642DP-T1-GE3 | MOSFET RECOMMENDED ALT 781-SIR470DP-T1-GE3 | ||
SIR644DP-T1-GE3 | MOSFET RECOMMENDED ALT 78-SIRA14DP-T1-GE3 | ||
Vishay |
SIR640ADP-T1-GE3 | IGBT Transistors MOSFET 40V 2mOhm@10V 60A N-CH | |
SIR642DP-T1-GE3 | IGBT Transistors MOSFET 40V 60A 83W 2.4mohms @ 10V | ||
SIR644DP-T1-GE3 | IGBT Transistors MOSFET 40V 2.7mOhm@60A 60A N-CH | ||
SIR618DP-T1-GE3 | MOSFET N-CH 200V 14.2A SO-8 | ||
SIR606DP-T1-GE3 | MOSFET N-CH 100V 37A POWERPAKSO | ||
SIR616DP-T1-GE3 | MOSFET N-CH 200V 20.2A SO-8 | ||
SIR622DP-T1-GE3 | MOSFET N-CH 150V 51.6A SO-8 | ||
SIR624DP-T1-GE3 | MOSFET N-CH 200V 18.6A SO-8 | ||
SIR626DP-T1-RE3 | MOSFET N-CH 60V 100A POWERPAKSO | ||
SIR638DP-T1-GE3 | MOSFET N-CH 40V 100A PPAK SO-8 | ||
SIR640DP-T1-GE3 | MOSFET N-CH 40V 60A PPAK SO-8 | ||
SIR606BDP-T1-RE3 | MOSFET N-CHAN 100V POWERPAK SO-8 | ||
SIR608DP-T1-RE3 | MOSFET N-CHAN 45V POWERPAK SO-8 | ||
SIR610DP-T1-RE3 | N-Channel 200 V (D-S) MOSFET | ||
SIR622DP-T1-RE3 | N-CHANNEL 150-V (D-S) MOSFET | ||
SIR626LDP-T1-RE3 | N-Channel 60-V (D-S) MOSFET PowerPAK SO-8 250M SG 2 mil , 1.5 m @ 10V m @ 7.5V 2.1 m @ 4.5V | ||
SIR632DP-T1-RE3 | N-CHANNEL 150-V (D-S) MOSFET | ||
SIR638ADP-T1-RE3 | MOSFET N-CH 40V 100A POWERPAKSO | ||
SIR638DP-T1-RE3 | MOSFET N-CH 40V 100A POWERPAKSO | ||
SIR646DP-T1-GE3 | MOSFET N-CH 40V 60A PPAK 8SO | ||
SIR604ADP-T1-E3 | 신규 및 오리지널 | ||
SIR604ADP-T1-GE3 | 신규 및 오리지널 | ||
SIR610DP-T1-E3 | 신규 및 오리지널 | ||
SIR610DP-T1-GE3 | 신규 및 오리지널 | ||
SIR622 21.5VDC | 신규 및 오리지널 | ||
SIR626DP | 신규 및 오리지널 | ||
SIR640ADP | 신규 및 오리지널 | ||
SIR642DP-T1-E3 | 신규 및 오리지널 | ||
SIR642DPT1GE3 | Power Field-Effect Transistor, 60A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
SIR644DP | 신규 및 오리지널 | ||
SIR644DP-T1-E3 | 신규 및 오리지널 |