 | | |
| PartNumber | SIR876ADP-T1-GE3 | SIR876DP-T1-GE3 |
| Description | MOSFET 100V Vds 20V Vgs PowerPAK SO-8 | MOSFET RECOMMENDED ALT 78-SIR876ADP-T1-GE3 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | E | E |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | - |
| Id Continuous Drain Current | 40 A | - |
| Rds On Drain Source Resistance | 9 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 49 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 62.5 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Packaging | Reel | Reel |
| Series | SIR | SIR |
| Transistor Type | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 54 S | - |
| Fall Time | 8 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 8 ns | - |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 28 ns | - |
| Typical Turn On Delay Time | 11 ns | - |
| Part # Aliases | SIR876ADP-GE3 | SIR876DP-GE3 |
| Unit Weight | 0.017870 oz | 0.017870 oz |
| Height | - | 1.04 mm |
| Length | - | 6.15 mm |
| Width | - | 5.15 mm |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIR876ADP-T1-GE3 | MOSFET 100V Vds 20V Vgs PowerPAK SO-8 | |
| SIR876DP-T1-GE3 | MOSFET RECOMMENDED ALT 78-SIR876ADP-T1-GE3 | ||
Vishay |
SIR876DP-T1-GE3 | MOSFET N-CH 100V 40A PPAK SO-8 | |
| SIR876ADP-T1-GE3 | MOSFET N-CH 100V 40A PPAK SO-8 | ||
| SIR876ADP | 신규 및 오리지널 | ||
| SIR876ANALOG DEVICES INC | 신규 및 오리지널 | ||
| SIR876DP | 신규 및 오리지널 |