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| PartNumber | SIRA18DP-T1-GE3 | SIRA18DP-T1-RE3 |
| Description | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | E | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 33 A | 33 A |
| Rds On Drain Source Resistance | 6 mOhms | 6 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V |
| Vgs Gate Source Voltage | 20 V, - 16 V | 20 V, - 16 V |
| Qg Gate Charge | 21.5 nC | 21.5 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 14.7 W | 14.7 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Packaging | Reel | Reel |
| Height | 1.04 mm | - |
| Length | 6.15 mm | - |
| Series | SIR | SIR |
| Transistor Type | 1 N-Channel | - |
| Width | 5.15 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 54 S | 54 S |
| Fall Time | 5 ns | 5 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 9 ns | 9 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 15 ns | 15 ns |
| Typical Turn On Delay Time | 11 ns | 11 ns |
| Unit Weight | 0.017870 oz | 0.017870 oz |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIRA18DP-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | |
| SIRA18DP-T1-RE3 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | ||
Vishay |
SIRA18DP-T1-GE3 | MOSFET N-CH 30V 33A PPAK SO-8 | |
| SIRA18DP-T1-RE3 | MOSFET N-CH 30V 33A POWERPAKSO-8 | ||
| SIRA18DP-T1-GE3-G | 신규 및 오리지널 |