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| PartNumber | SIS478DN-T1-GE3 | SIS478DN | SIS478DN-T1-E3 |
| Description | IGBT Transistors MOSFET 30V 12A N-CH MOSFET | ||
| Manufacturer | VISHAY | - | - |
| Product Category | FETs - Single | - | - |
| Series | SISxxxDN | - | - |
| Packaging | Reel | - | - |
| Part Aliases | SIS478DN-GE3 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | PowerPAK-1212-8 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 15.6 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Vgs Gate Source Voltage | +/- 25 V | - | - |
| Id Continuous Drain Current | 12 A | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V to 2.5 V | - | - |
| Rds On Drain Source Resistance | 16 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Qg Gate Charge | 7 nC | - | - |
| Forward Transconductance Min | 20 S | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay |
SIS478DN-T1-GE3 | IGBT Transistors MOSFET 30V 12A N-CH MOSFET | |
| SIS478DN | 신규 및 오리지널 | ||
| SIS478DN-T1-E3 | 신규 및 오리지널 |