 | | | |
| PartNumber | SIZ900DP | SIZ900DP-T1-GE3 | SIZ900DT |
| Description | |||
| Manufacturer | - | - | Vishay Siliconix |
| Product Category | - | - | FETs - Arrays |
| Series | - | - | TrenchFETR |
| Packaging | - | - | Digi-ReelR Alternate Packaging |
| Part Aliases | - | - | SIZ900DT-GE3 |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | 6-PowerPair |
| Technology | - | - | Si |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Number of Channels | - | - | 2 Channel |
| Supplier Device Package | - | - | 6-PowerPair |
| Configuration | - | - | Dual Common Source |
| FET Type | - | - | 2 N-Channel (Half Bridge) |
| Power Max | - | - | 48W, 100W |
| Transistor Type | - | - | 2 N-Channel |
| Drain to Source Voltage Vdss | - | - | 30V |
| Input Capacitance Ciss Vds | - | - | 1830pF @ 15V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 24A, 28A |
| Rds On Max Id Vgs | - | - | 7.2 mOhm @ 19.4A, 10V |
| Vgs th Max Id | - | - | 2.4V @ 250μA |
| Gate Charge Qg Vgs | - | - | 45nC @ 10V |
| Pd Power Dissipation | - | - | 48 W 100 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 24 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Rds On Drain Source Resistance | - | - | 5.9 mOhms 3.2 mOhms |
| Transistor Polarity | - | - | N-Channel |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
| SIZ900DP | 신규 및 오리지널 | ||
| SIZ900DP-T1-GE3 | 신규 및 오리지널 | ||
| SIZ900DT | 신규 및 오리지널 | ||
| SIZ900DT-T1-E3 | 신규 및 오리지널 | ||
Vishay |
SIZ900DT-T1-GE3 | MOSFET 2N-CH 30V 24A POWERPAIR |