 | | | |
| PartNumber | SMMBFJ309LT1G | SMMBFJ310LT1G | SMMBFJ310LT1 |
| Description | JFET SS SOT23 JFET NCH 25V TR | JFET SS JFET XSTR SPCL | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | JFET | JFET | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Configuration | Single | Single | - |
| Vgs Gate Source Breakdown Voltage | - 25 V | - 25 V | - |
| Pd Power Dissipation | 225 mW | 225 mW | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | MMBFJ309L | MMBFJ310L | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Type | JFET | JFET | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Gate Source Cutoff Voltage | - 6.5 V | - 6.5 V | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
| SMMBFJ310LT3G | JFET SS JFET XSTR SPCL | ||
| SMMBFJ309LT1G | JFET SS SOT23 JFET NCH 25V TR | ||
| SMMBFJ310LT1 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB | ||
ON Semiconductor |
SMMBFJ310LT1G | JFET SS JFET XSTR SPCL | |
| SMMBFJ310LT1G | 신규 및 오리지널 | ||
| SMMBFJ309LT1G | JFET SS SOT23 JFET NCH 25V TR | ||
| SMMBFJ310LT3G | JFET SS JFET XSTR SPCL |