 |  | | |
| PartNumber | SMMJT350T1G | SMMJT350T3G | SMMJT9435T1G |
| Description | Bipolar Transistors - BJT BIP S0T223 PNP 0.5A 300V | Bipolar Transistors - BJT BIP S0T223 PNP 0.5A 300V | - Bulk (Alt: SMMJT9435T1G) |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Series | MMJT350T1 | - | - |
| Packaging | Reel | Reel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 1000 | 4000 | - |
| Subcategory | Transistors | Transistors | - |
| Technology | - | Si | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | SOT-223-4 | - |
| Transistor Polarity | - | PNP | - |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | 300 V | - |
| Collector Base Voltage VCBO | - | 300 V | - |
| Emitter Base Voltage VEBO | - | 5 V | - |
| Maximum DC Collector Current | - | 0.5 A | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| DC Current Gain hFE Max | - | 240 | - |
| Continuous Collector Current | - | 0.5 A | - |
| DC Collector/Base Gain hfe Min | - | 30 | - |
| Pd Power Dissipation | - | 2.75 W | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
| SMMJT350T1G | Bipolar Transistors - BJT BIP S0T223 PNP 0.5A 300V | ||
| SMMJT350T3G | Bipolar Transistors - BJT BIP S0T223 PNP 0.5A 300V | ||
| SMMJT9435T1G | - Bulk (Alt: SMMJT9435T1G) | ||
ON Semiconductor |
SMMJT350T1G | TRANS PNP 300V 0.5A SOT223 |