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| PartNumber | SPD30P06PGBTMA1 | SPD30P06PG |
| Description | MOSFET P-Ch -60V -30A DPAK-2 | -60V,-30A,P Channel Power MOSFET |
| Manufacturer | Infineon | - |
| Product Category | MOSFET | - |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | TO-252-3 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | - |
| Id Continuous Drain Current | 30 A | - |
| Rds On Drain Source Resistance | 69 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 48 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 125 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Packaging | Reel | - |
| Height | 2.3 mm | - |
| Length | 6.5 mm | - |
| Series | XPD30P06 | - |
| Transistor Type | 1 P-Channel | - |
| Width | 6.22 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 5.2 S | - |
| Fall Time | 20 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 11 ns | - |
| Factory Pack Quantity | 2500 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 30 ns | - |
| Typical Turn On Delay Time | 13 ns | - |
| Part # Aliases | G SP000441776 SPD30P06P SPD3P6PGXT | - |
| Unit Weight | 0.139332 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
SPD30P06PGBTMA1 | MOSFET P-Ch -60V -30A DPAK-2 | |
| SPD30P06PGBTMA1 | MOSFET P-CH 60V 30A TO252-3 | ||
| SPD30P06PG | -60V,-30A,P Channel Power MOSFET |