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| PartNumber | SPI11N60S5 | SPI11N60S5-11N60S5 | SPI11N60S5. |
| Description | IGBT Transistors MOSFET N-Ch 600V 11A I2PAK-3 CoolMOS S5 | ||
| Manufacturer | INF | - | - |
| Product Category | IC Chips | - | - |
| Series | CoolMOS S5 | - | - |
| Packaging | Tube | - | - |
| Part Aliases | SPI11N60S5HKSA1 | - | - |
| Unit Weight | 0.084199 oz | - | - |
| Mounting Style | Through Hole | - | - |
| Tradename | CoolMOS | - | - |
| Package Case | I2PAK-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 125 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 20 ns | - | - |
| Rise Time | 35 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 11 A | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Rds On Drain Source Resistance | 380 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 150 ns | - | - |
| Typical Turn On Delay Time | 130 ns | - | - |
| Channel Mode | Enhancement | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
| SPI11N60S5 | IGBT Transistors MOSFET N-Ch 600V 11A I2PAK-3 CoolMOS S5 | ||
| SPI11N60S5-11N60S5 | 신규 및 오리지널 | ||
| SPI11N60S5. | 신규 및 오리지널 | ||
Infineon Technologies |
SPI11N60S5BKSA1 | MOSFET N-CH 600V 11A TO-262 |