 | |  | |
| PartNumber | SPU02N60C3 | SPU02N60C3,02N60C3 | SPU02N60C3BKMA1 |
| Description | Trans MOSFET N-CH 600V 1.8A 3-Pin TO-251 Tube (Alt: SPU02N60C3) | MOSFET N-CH 650V 1.8A IPAK | |
| Manufacturer | INFINEON | - | - |
| Product Category | FETs - Single | - | - |
| Series | CoolMOS C3 | - | - |
| Packaging | Tube | - | - |
| Part Aliases | SP000015064 SPU02N60C3BKMA1 SPU02N60C3XK | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Tradename | CoolMOS | - | - |
| Package Case | TO-252-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 25 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 12 ns | - | - |
| Rise Time | 3 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 1.8 A | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Rds On Drain Source Resistance | 3 Ohms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 68 ns | - | - |
| Typical Turn On Delay Time | 6 ns | - | - |
| Channel Mode | Enhancement | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
SPU02N60S5 | MOSFET N-Ch 600V 1.8A IPAK-3 CoolMOS S5 | |
| SPU02N60C3BKMA1 | MOSFET N-CH 650V 1.8A IPAK | ||
| SPU02N60S5BKMA1 | MOSFET N-CH 600V 1.8A TO-251 | ||
| SPU02N60S5 | IGBT Transistors MOSFET N-Ch 600V 1.8A IPAK-3 CoolMOS S5 | ||
| SPU02N60C3 | Trans MOSFET N-CH 600V 1.8A 3-Pin TO-251 Tube (Alt: SPU02N60C3) | ||
| SPU02N60C3,02N60C3 | 신규 및 오리지널 | ||
| SPU02N60C3S | 신규 및 오리지널 | ||
| SPU02N60S5XK | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |