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| PartNumber | SQ4435EY-T1_GE3 | SQ4435EY-T1-GE3 | SQ4435EY-T1-GE3-HF |
| Description | MOSFET P-Channel 30V AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQ4435EY-T1_GE3 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 15 A | - | - |
| Rds On Drain Source Resistance | 13 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 58 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 6.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Series | SQ | SQ | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 3.9 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 22 S | - | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 9 ns | - | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 45.3 ns | - | - |
| Typical Turn On Delay Time | 12.5 ns | - | - |
| Unit Weight | 0.002610 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQ4435EY-T1_GE3 | MOSFET P-Channel 30V AEC-Q101 Qualified | |
| SQ4435EY-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQ4435EY-T1_GE3 | ||
| SQ4435EY-T1-GE3 | RF Bipolar Transistors MOSFET P-Channel 30V Automotive MOSFET | ||
| SQ4435EY-T1-GE3-HF | 신규 및 오리지널 |