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| PartNumber | SQ4840EY-T1_GE3 | SQ4840EY-T1-GE3 |
| Description | MOSFET 40V 10A 1.56W AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 781-SQ4840EY_GE3 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | E | E |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | - |
| Id Continuous Drain Current | 20.7 A | - |
| Rds On Drain Source Resistance | 7.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 62 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 7.1 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Series | SQ | SQ |
| Transistor Type | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 45 S | - |
| Fall Time | 17 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 11 ns | - |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 45 ns | - |
| Typical Turn On Delay Time | 14 ns | - |
| Unit Weight | 0.006596 oz | 0.006596 oz |
| Height | - | 1.75 mm |
| Length | - | 4.9 mm |
| Width | - | 3.9 mm |
| Part # Aliases | - | SQ4840EY-GE3 |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQ4840EY-T1_GE3 | MOSFET 40V 10A 1.56W AEC-Q101 Qualified | |
| SQ4840EY-T1-GE3 | MOSFET RECOMMENDED ALT 781-SQ4840EY_GE3 | ||
| SQ4840EY-T1-GE3 | RF Bipolar Transistors MOSFET 40V 10A 1.56W 9.0mohm @ 10V | ||
Vishay |
SQ4840EY-T1_GE3 | MOSFET N-CH 40V 20.7A | |
| SQ4840DY | 신규 및 오리지널 | ||
| SQ4840DY-T1-GE3 | 신규 및 오리지널 | ||
| SQ4840EY | 신규 및 오리지널 | ||
| SQ4840EY-T1-E3 | 신규 및 오리지널 |