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| PartNumber | SQD50P03-07_GE3 | SQD50P03-07-T4_GE3 | SQD50P04-09L-GE3 |
| Description | MOSFET P-Channel 30V AEC-Q101 Qualified | MOSFET -30V Vds 20V Vgs TO-252 | MOSFET RECOMMENDED ALT 78-SQD50P04-09L_GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 50 A | 50 A | - |
| Rds On Drain Source Resistance | 5 mOhms | 7 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - 2.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 146 nC | 146 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 136 W | 136 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | - | Reel |
| Height | 2.38 mm | - | - |
| Length | 6.73 mm | - | - |
| Series | SQ | SQ | SQ |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 6.22 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 52 S | 52 S | - |
| Fall Time | 28 ns | 28 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 12 ns | 12 ns | - |
| Factory Pack Quantity | 2000 | 1 | 2000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 63 ns | 63 ns | - |
| Typical Turn On Delay Time | 11 ns | 11 ns | - |
| Unit Weight | 0.011993 oz | - | 0.050717 oz |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQD50P08-25L_GE3 | MOSFET 80V 50A 136W AEC-Q101 Qualified | |
| SQD50P08-28_GE3 | MOSFET P-Channel 80V AEC-Q101 Qualified | ||
| SQD50P04-13L_GE3 | MOSFET 40V 50A 83W AEC-Q101 Qualified | ||
| SQD50P04-09L_GE3 | MOSFET 40V 50A 136W AEC-Q101 Qualified | ||
| SQD50P06-15L_GE3 | MOSFET 60V 50A 136W AEC-Q101 Qualified | ||
| SQD50P03-07_GE3 | MOSFET P-Channel 30V AEC-Q101 Qualified | ||
| SQD50P08-28-T4_GE3 | MOSFET -80V Vds 20V Vgs TO-252 | ||
| SQD50P04-09L_T4GE3 | MOSFET -40V Vds 20V Vgs TO-252 | ||
| SQD50P03-07-T4_GE3 | MOSFET -30V Vds 20V Vgs TO-252 | ||
| SQD50P04-09L-GE3 | MOSFET RECOMMENDED ALT 78-SQD50P04-09L_GE3 | ||
| SQD50P08-28-GE3 | MOSFET RECOMMENDED ALT 78-SQD50P08-28_GE3 | ||
| SQD50P08-25L-GE3 | MOSFET RECOMMENDED ALT 78-SQD50P08-25L_GE3 | ||
| SQD50P08-25L-GE3 | RF Bipolar Transistors MOSFET 80V 50A 136W P-Ch Automotive | ||
| SQD50P04-09L-GE3 | Trans MOSFET P-CH 40V 50A | ||
| SQD50P06-15L-GE3 | IGBT Transistors MOSFET 60V 50A 136W P-Ch Automotive | ||
| SQD50P04-13L_GE3-CUT TAPE | 신규 및 오리지널 | ||
| SQD50N108M9L | 신규 및 오리지널 | ||
| SQD50P03-07 | 신규 및 오리지널 | ||
| SQD50P03-07-15 | 신규 및 오리지널 | ||
| SQD50P03-07-GE3 | P-CHANNEL 30-V (D-S) 175C MOSF | ||
| SQD50P04 | 신규 및 오리지널 | ||
| SQD50P04-09L | 신규 및 오리지널 | ||
| SQD50P04-13L | 신규 및 오리지널 | ||
| SQD50P04-13L-AA | 신규 및 오리지널 | ||
| SQD50P04-13L-GE3 | Trans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R | ||
| SQD50P06-15L | 신규 및 오리지널 | ||
| SQD50P06-15L-E3 | 신규 및 오리지널 | ||
| SQD50P08-25L | 신규 및 오리지널 | ||
| SQD50P0828GE3 | Power Field-Effect Transistor, 48A I(D), 80V, 0.028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | ||
Vishay |
SQD50P06-15L_GE3 | MOSFET P-CH 60V 50A TO252 | |
| SQD50P08-25L_GE3 | MOSFET P-CHAN 80V TO252 | ||
| SQD50P03-07_GE3 | MOSFET P-CH 30V 50A TO252AA | ||
| SQD50P04-09L_GE3 | MOSFET P-CH 40V 50A | ||
| SQD50P08-28_GE3 | MOSFET P-CH 80V 48A TO252AA | ||
| SQD50N10-8M9L_GE3 | MOSFET N-CHAN 100V TO252 | ||
| SQD50P04-13L_GE3 | MOSFET P-CH 40V 50A | ||
| SQD50P08-28 | 신규 및 오리지널 |