SQM50N04-4m1

SQM50N04-4m1_GE3 vs SQM50N04-4M1-GE3 vs SQM50N04-4M1

 
PartNumberSQM50N04-4m1_GE3SQM50N04-4M1-GE3SQM50N04-4M1
DescriptionMOSFET 40V 50A 150W AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 781-SQM50N04-4M1_GE3
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current50 A--
Rds On Drain Source Resistance3 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge105 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation150 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Height4.83 mm4.83 mm-
Length10.67 mm10.67 mm-
SeriesSQSQ-
Transistor Type1 N-Channel--
Width9.65 mm9.65 mm-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min200 S--
Fall Time9 ns--
Product TypeMOSFETMOSFET-
Rise Time5 ns--
Factory Pack Quantity800800-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time35 ns--
Typical Turn On Delay Time12 ns--
Unit Weight0.068654 oz0.068654 oz-
제조사 부분 # 설명 RFQ
Vishay / Siliconix
Vishay / Siliconix
SQM50N04-4m1_GE3 MOSFET 40V 50A 150W AEC-Q101 Qualified
SQM50N04-4M1-GE3 MOSFET RECOMMENDED ALT 781-SQM50N04-4M1_GE3
SQM50N04-4M1-GE3 RF Bipolar Transistors MOSFET 40V 50A 150W TrenchFET
SQM50N04-4M1 신규 및 오리지널
Vishay
Vishay
SQM50N04-4M1_GE3 MOSFET N-CH 40V 50A TO-263
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